DocumentCode
2211578
Title
A 2.469∼2.69GHz AlGaN/GaN HEMT power amplifier for IEEE 802.16e WiMAX applications
Author
Li, Weijia ; Wang, Yan ; Ghione, Giovanni
Author_Institution
Dept. of Electron., Politec. di Torino, Turin, Italy
fYear
2008
fDate
19-21 Nov. 2008
Firstpage
1475
Lastpage
1479
Abstract
This paper presents a 2.469~2.69 GHz AlGaN/GaN HEMT power amplifier for IEEE 802.16e WiMAX applications operating at E mode under a single supply of +6v. At the central frequency point, the power added efficiency (PAE) can achieve 96.37%, the small signal gain is 20.81dB, and the output power is 25.39dBm. The paper describes the circuit design in detail, then shows the simulation results and discusses about the simulation results. In the end, the paper concludes the design.
Keywords
WiMax; aluminium compounds; gallium compounds; high electron mobility transistors; power amplifiers; AlGaN-GaN; HEMT power amplifier; IEEE 802.16 WiMAX applications; efficiency 96.37 percent; frequency 2.469 GHz to 2.69 GHz; gain 20.81 dB; voltage 6 V; Aluminum gallium nitride; Circuit simulation; Gallium arsenide; Gallium nitride; HEMTs; Power amplifiers; Semiconductor materials; Switches; Voltage; WiMAX; AlGaN/GaN HEMT; IEEE 802.16e; PAE; Power Amplifier; WiMAX;
fLanguage
English
Publisher
ieee
Conference_Titel
Communication Systems, 2008. ICCS 2008. 11th IEEE Singapore International Conference on
Conference_Location
Guangzhou
Print_ISBN
978-1-4244-2423-8
Electronic_ISBN
978-1-4244-2424-5
Type
conf
DOI
10.1109/ICCS.2008.4737428
Filename
4737428
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