Title :
Growth and band-gap modulation in single-crystalline Si1-xGex nanowires for nanophotonics applications
Author :
Yang, Jee-Eun ; Jin, Chang-Beom ; Kim, Cheol-Joo ; Yoon, Donghwan ; Kim, Sungjee ; Yang, Yosep ; Park, Chan-Gyung ; Jo, Moon-Ho
Author_Institution :
Dept. of Mater. Sci. & Eng., Pohang Univ. of Sci. & Technol., Pohang
Abstract :
We report growth of single crystalline Si1-xGex nanowires, whose relative composition is controllably tuned over the entire composition range by Au-catalyst assisted chemical vapor syntheses. We also present experimental demonstration of the band-gap modulation from near infrared to ultraviolet regions with alloying of Si and Ge, and their spatial confinement at the nanometer scale. Our finding demonstrates that the energy band-gap of Si1-xGex nanowires can be modulated in a wider energy range, and suggests implications for group IV semiconductor nanophotonics.
Keywords :
Ge-Si alloys; catalysts; chemical vapour deposition; energy gap; gold; infrared spectra; nanowires; photoluminescence; semiconductor growth; wide band gap semiconductors; Au; Au - Element; Au-catalyst assisted chemical vapor synthesis; Ge-Si; Ge-Si - System; band-gap modulation; energy band-gap; group IV semiconductor nanophotonics; nanophotonics applications; single-crystalline nanowires; single-crystalline silicon-germanium alloy growth; spatial confinement; Absorption; Alloying; Chemical technology; Crystals; Materials science and technology; Nanocrystals; Nanophotonics; Nanowires; Optical modulation; Photonic band gap; band-gap modulation; group IV semiconductors; nanowires; photonics;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388719
