An X-band SiGe LNA with 1.36 dB mean noise figure for monolithic phased array transmit/receive radar modules

Author

Kuo, Wei-Min Lance ; Liang, Qingqing ; Cressler, John D. ; Mitchell, Mark A.

Author_Institution

Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA

fYear

2006

fDate

11-13 June 2006

Lastpage

501

Abstract

This paper presents an X-band silicon-germanium (SiGe) low-noise amplifier (LNA) for a monolithically integrated phased array transmit/receive (T/R) radar module. Implemented in a 200 GHz SiGe BiCMOS technology, the LNA occupies 730 times 720 mum² (including bondpads), and dissipates 15 mW from a 2.5 V power supply. The circuit exhibits a gain greater than 19 dB from 8.5 to 10.5 GHz, and a mean noise figure (NF) of 1.36 dB across X-band. At 10 GHz, the input 1-dB compression point (IP_1-dB) and the input third-order intercept point (IIP₃) are -10.0 dBm and 0.8 dBm, respectively. To our knowledge, this LNA achieves the lowest noise figure of any LNA in Si-based technology at X-band

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MIMIC; low noise amplifiers; millimetre wave amplifiers; phased array radar; 1.36 dB; 10 GHz; 15 mW; 2.5 V; 200 GHz; 8.5 to 10.5 GHz; BiCMOS technology; SiGe; low noise amplifiers; monolithically integrated phased array radar; transmit-receive radar; BiCMOS integrated circuits; Bonding; Germanium silicon alloys; Integrated circuit technology; Low-noise amplifiers; Noise figure; Phased arrays; Power supplies; Radar; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651200

Filename

1651200