Analysis of intra-step-barrier quantum wells for high-power electroabsorption modulators

Author

Shin, D.S. ; Chen, W.X. ; Pappert, S.A. ; Chow, D. ; Yap, D. ; Yu, P.K.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

fYear

2002

fDate

7-9 Jan. 2002

Firstpage

17

Lastpage

20

Abstract

We present analysis and preliminary experimental results of intra-step-barrier quantum wells for high-saturation-optical-power electroabsorption modulators. We have shown that the intra-step-barrier delays the onset of red shift in the quantum-confined Stark effect to a higher field.

Keywords

electro-optical modulation; electroabsorption; optical communication equipment; quantum confined Stark effect; quantum well devices; red shift; semiconductor quantum wells; InGaAlAs-InAlAs; InGaAsP-InGaAsP; MQW active layer; electroabsorption characteristics; high-power electroabsorption modulators; high-saturation-optical-power EA modulators; intra-step-barrier quantum wells; microwave fiber-optic link performance; multiple quantum well; quantum-confined Stark effect; red shift onset delay; red shift suppression; Charge carrier processes; Delay effects; Electrons; Energy states; Indium compounds; Optical modulation; Optical saturation; Quantum well devices; Stark effect; Wave functions;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Photonics, 2001. MWP '01. 2001 International Topical Meeting on

Conference_Location

Long Beach, CA, USA

Print_ISBN

0-7803-7003-1

Type

conf

DOI

10.1109/MWP.2002.981785

Filename

981785