Low-power full-band UWB active pulse shaping circuit using 0.18-/spl mu/m CMOS technology

Author

Wong, King Wah ; Karri, Satyanarayana Reddy ; Zheng, Yuanjin

Author_Institution

Inst. of Microelectron., Singapore

fYear

2006

fDate

11-13 June 2006

Abstract

A low-power active pulse shaping circuit for ultra wide-band (UWB) dual-band transmitter is presented. The circuit is fully integrated in 0.18-mum CMOS technology and only consumes a total power of 10.8mW from a supply voltage of 1.8V. The circuit is composed of a passive part shaping the pulse and an active part providing gain over the whole UWB frequency range (3.1 to 10.6 GHz) to fit the transmitted pulse to the Federal Communications Commission (FCC) mask. This output stage circuit provides a gain of 7 to 8dB across the band of interest

Keywords

CMOS integrated circuits; low-power electronics; microwave integrated circuits; pulse shaping circuits; radio transmitters; ultra wideband communication; 0.18 micron; 1.8 V; 10.8 mW; 3.1 to 10.6 GHz; 7 to 8 dB; CMOS technology; active pulse shaping circuit; driver amplifier; dual-band transmitter; ultra wide-band transmitter; CMOS technology; Dual band; FCC; Frequency; Integrated circuit technology; Pulse circuits; Pulse shaping methods; Transmitters; Ultra wideband technology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 2006 IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-9572-7

Type

conf

DOI

10.1109/RFIC.2006.1651203

Filename

1651203