Title :
Measurements and models of ion energy distributions in high-density, radio-frequency-biased CF/sub 4/ discharges
Author :
Sobolewski, M.A. ; Wang, Yannan ; Goyette, A.
Author_Institution :
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
Abstract :
Summary form only given. Ion dynamics in the narrow sheaths of high-density plasmas, especially in sheaths biased by radio-frequency (RF) voltages, are complicated and nonlinear. Models of such high-density, RF sheaths are needed to predict ion bombardment energies in simulations of high-density plasma etching. To provide data to test these models, we have measured ion energy distributions (IEDs) in CF, discharges in a high-density, inductively coupled plasma reactor, at a pressure of 1.33 Pa (10 mTorr), using a mass spectrometer equipped with an ion energy analyzer. Energy distributions of CF/sub 3//sup +/, CF/sub 2//sup +/, CF/sup +/ and F/sup +/ ions were measured as a function of RF bias frequency, RF bias amplitude, and inductive source power. Simultaneous measurements by a capacitive probe and a Faraday cup provide enough information to completely determine the input parameters of sheath models and allow direct comparison of calculated and measured IEDs. For conditions where the RF bias period is much smaller than, or much larger than, the time it takes ions to cross the sheath, very simple models are able to predict the features of the measured IEDs. When the RF bias period approaches the ion transit time, however, more complicated models are required. One recently developed model, which include a complete treatment of time-dependent ion dynamics in the sheath, was found to accurately predict the behavior of measured IEDs over the entire range of RF bias frequency.
Keywords :
high-frequency discharges; mass spectra; organic compounds; plasma density; plasma diagnostics; plasma sheaths; 1.33 Pa; 10 mtorr; Faraday cup; RF bias amplitude; RF bias frequency; biased sheaths; capacitive probe; high-density RF sheaths; high-density plasma etching simulation; high-density plasma sheaths; high-density radio-frequency-biased tetrafluoromethane discharges; inductive source power; ion bombardment energies; ion dynamics; ion energy analyzer; ion energy distribution measurement; ion energy distributions; ion energy distributions models; ion transit time; mass spectrometer; narrow sheaths; plasma pressure; sheath models; time-dependent ion dynamics; Energy measurement; Etching; Frequency measurement; Plasma applications; Plasma measurements; Plasma sheaths; Plasma simulation; Predictive models; Radio frequency; Voltage;
Conference_Titel :
Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on
Conference_Location :
Banff, Alberta, Canada
Print_ISBN :
0-7803-7407-X
DOI :
10.1109/PLASMA.2002.1030570