• DocumentCode
    2212044
  • Title

    Current induced magnetization switching in spin valves

  • Author

    Nguyen, H.Y.T. ; Yi, Hyoseok ; Joo, S.J. ; Lee, K.J. ; Shin, K.-H.

  • Author_Institution
    Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    184
  • Lastpage
    185
  • Abstract
    We have studied the current induced magnetization switching (CIMS) in cobalt-based spin valve structures. Two exchange bias spin valves with extended fixed ferromagnets adopted as a current lead have been chosen for the study. The difference between them is that in the first structure, labeled EBSV (exchange-biased spin valve), no nano-oxide layer (NOL) was applied, while in the second structure, named NOL-EBSV, a NOL is inserted into the exchange biased pinned ferromagnet lead. The CIMSs in these two structures and in a non-exchange biased one, called SSV serving as the reference sample, have been studied. The temperature and field dependence of switching current in EBSV and SSV are also investigated for a better understanding the effect of exchange pinning field on the CIMS. The experiment result of CIMS in the EBSV shows a significant reduction in switching current density by a factor of 4.8, compared with a non-exchange biased spin valve with similar layer thicknesses. A double large reduction of switching current density is observed in the NOL-EBSV. We qualitatively analyze the effect of the exchange bias pinning field as well as of the nano-oxide layer on the reduction of switching current. A quantitative interpretation of the enhancement of CIMS by nano-oxide layer has been done by a three dimensional calculation of spin transport in EBSV and NOL-EBSV.
  • Keywords
    cobalt; current density; lead; magnetisation; spin valves; Co; Co - Element; Pb; Pb - Element; cobalt-based spin valve; current induced magnetization switching; exchange bias spin valves; exchange biased pinned ferromagnet lead; switching current density; Computer integrated manufacturing; Electrical resistance measurement; Gold; Magnetic field measurement; Magnetic multilayers; Magnetic switching; Magnetization; Milling; Spin valves; Sputtering; CIMS; Spin Transfer torque; Spin valves; exchange-biased; nano-oxide layer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0540-4
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388736
  • Filename
    4388736