Magnetization correlations in lateral NiFe/Sb/NiFe spin valve devices

We have presented measurements of spin transport in antimony (Sb) which is an important electronic material for III-V semiconductors. Antimony films have been used for a conducting channel between two ferromagnetic electrodes in a lateral spin valve device. The Sb films show a metallic behavior in temperature dependence of resistivity. We demonstrate the first evidence of correlations of magnetization through the Sb channel in lateral NiFe/Sb/NiFe spin valve devices. A clear spin valve effect and the memory effect have been observed in a measurement using the conventional 4-probe geometry. The memory effect ensures that the observed spin valve signal originates from the spin polarized current in the Sb film.