Title :
Ka-band Coplanar Low-Noise Amplifier Design with Power PHEMTs
Author :
Long, Sabine ; Escotte, Laurent ; Graffeuil, Jacques ; Fellon, Philippe ; Roques, Daniel
Author_Institution :
LAAS CNRS et Université Paul Sabatier, 7 Av. du Colonel Roche, 31077 Toulouse cedex 4, France
Abstract :
The design of a coplanar low-noise amplifier (LNA) is presented in this paper. Pseudomorphic high electron mobility transistors (PHEMTs), optimized for power applications, are used in order to evaluate the potentiality of this technology for mixed-mode applications. The three stages amplifier noise figure is lower than 2.6 dB on the 27 - 31 GHz frequency band with a 20 dB power gain.
Keywords :
Circuit noise; Circuit synthesis; Frequency; Geometry; Intrusion detection; Low-noise amplifiers; Noise figure; PHEMTs; Semiconductor device noise; Thermal resistance;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340815
