• DocumentCode
    2212193
  • Title

    Growth of nickel silicide nanowires by chemical vapor deposition

  • Author

    Jin, Chang-Beom ; Kim, Cheol-Joo ; Jo, Moon-Ho

  • Author_Institution
    Pohang Univ. of Sci. & Technol. (POSTECH), Pohang
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    200
  • Lastpage
    201
  • Abstract
    We report the growth process of Ni-silicide nanowires by chemical vapor deposition using SiH4 as a precursor. We have found systematic variation of shapes and compositions of Ni-silicide nanostructures from thin films to nanowires with growth variables such as growth temperature and SiH4 partial pressure. Based upon one-dimensional Ni diffusion model, we discuss the growth mechanism of Ni-silicide nanowire.
  • Keywords
    chemical vapour deposition; nanotechnology; nanowires; nickel alloys; silicon alloys; NiSi; NiSi - Binary; chemical vapor deposition; nickel silicide nanowires growth; thin films; Chemical vapor deposition; Crystallization; Nanostructures; Nanowires; Nickel; Scanning electron microscopy; Silicides; Temperature; Transistors; Transmission electron microscopy; Chemical vapor deposition; Nanowire; Nickel; Silicide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0541-1
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388742
  • Filename
    4388742
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2212193