• DocumentCode
    2212343
  • Title

    Ion-species distribution in a high-current broad beam

  • Author

    Sakudo, N. ; Hayashi, K. ; Okuji, S. ; Nishiyama, Youji ; Komatsy, K. ; Miyamoto, Ayaho ; Yutani, M.

  • Author_Institution
    Kanazawa Inst. of Technol., Ishikawa, Japan
  • fYear
    2000
  • fDate
    4-7 June 2000
  • Firstpage
    280
  • Abstract
    Summary form only given. A high-current broad ion beam which is extracted with multi-aperture electrodes from a large-volume plasma has come to be required not only for processing the size-growing silicon wafers but also for industrial applications to non-semiconductor materials. In order to study the spatial distributions of fragment ions from the chemical compound as the source material, we constructed a new apparatus equipped with a quadruple mass spectrometer to measure the ion-species distribution in the source plasma. The spectrometer is moved in vacuum, and local ratios of the fragment ions are measured by extracting the ions through small holes which are made on the wall separating the plasma and the spectrometer room. The experiment was carried out with CF/sub 4/ as the source material. The results suggest that the ion-species distributions are not consistent with the electron-density distribution. The ion-species distributions are strongly dependent on the molecule flow of the source material in the plasma chamber, but the electron-density distribution is not.
  • Keywords
    ion beams; ion sources; mass spectra; plasma materials processing; plasma-beam interactions; carbon tetrafluoride; electron-density distribution; fragment ions; high-current broad beam; ion extraction; ion-species distribution; ion-species distributions; large-volume plasma; multi-aperture electrodes; nonsemiconductor materials; plasma chamber; quadruple mass spectrometer; size-growing Si wafers; spatial distributions; tetrafluoromethane; Chemical compounds; Electrodes; Ion beams; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma sources; Silicon; Spectroscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Plasma Science, 2000. ICOPS 2000. IEEE Conference Record - Abstracts. The 27th IEEE International Conference on
  • Conference_Location
    New Orleans, LA, USA
  • ISSN
    0730-9244
  • Print_ISBN
    0-7803-5982-8
  • Type

    conf

  • DOI
    10.1109/PLASMA.2000.855158
  • Filename
    855158