DocumentCode
2212371
Title
The Effect of Low-K Dielectrics on RFIC Inductors
Author
Jeon, Jong-Hyeok ; Inigo, Emigdio J. ; Reiha, Michael T. ; Choi, Tae-Young ; Lee, Yongshik ; Mohammadi, Saeed ; Katehi, Linda P.B.
Author_Institution
School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, U.S.A., Phone: +1-765-494-3480
fYear
2003
fDate
Oct. 2003
Firstpage
53
Lastpage
56
Abstract
This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8¿ dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU-8¿ deposited on high resistivity Si.
Keywords
Conductivity; Design optimization; Dielectric materials; Dielectric substrates; Fabrication; Inductors; Polymers; Q factor; Radiofrequency integrated circuits; Silicon; BCB; Quality factor; SU-8¿; dielectric loss; inductor; self resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340824
Filename
4142952
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