DocumentCode
2212389
Title
Refined Wide Band Modelling and Design of CMOS-Compatible Spiral Inductors with BCB Dielectric Layer
Author
Tikhov, Yuri ; Shim, Dongha ; Nam, Kuang Woo ; Song, Insang
Author_Institution
Samsung Advanced Institute of Technology, P.O. Box 111, Suwon 440-600, Korea. phone: +82-31-280-9469, fax: +82-31-280-9473, e-mail: tikhov@sait.samsung.co.kr
fYear
2003
fDate
Oct. 2003
Firstpage
57
Lastpage
60
Abstract
This paper discloses a new measurement-based model of on-chip spiral inductor with BCB dielectric layer. The parameters of refined equivalent circuit are extracted through an optimisation with respect to specially formulated objective function. Accurate modelling of fabricated high-Q inductors validates the proposed approach over a wide band from 100 MHz to 20 GHz.
Keywords
Capacitance; Dielectric substrates; Equivalent circuits; Fabrication; Frequency; Inductors; Integrated circuit modeling; Silicon; Spirals; Wideband;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340825
Filename
4142953
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