Title :
Role of nanostructures in reducing thermal conductivity below alloy limit in crystalline solids
Author :
Kim, Woochul ; Singer, Suzanne ; Majumdar, Arun ; Zide, Joshua ; Gossard, Arthur ; Shakouri, Ali
Author_Institution :
Dept. of Mech. Eng., California Univ., Berkeley, CA, USA
Abstract :
Atomic substitution in alloys can efficiently scatter phonons, thereby significantly reducing the thermal conductivity in crystalline solids to the "alloy limit". It has been difficult to beat the alloy limit without creating defects, dislocations, and voids, which also reduce electrical conductivity, making it ineffective for increasing the material\´s thermoelectric figure of merit. Using In0.53Ga0.47As containing epitaxially embedded ErAs nanoislands a few nm in size, we demonstrate thermal conductivity reduction by almost a factor of two below the alloy limit, and corresponding increase in thermoelectric figure of merit by more than a factor of two. A theoretical model suggests that while point defects in alloys efficiently scatter short wavelength phonons, the ErAs nanoislands provides additional scattering mechanism for the mid to long wavelength phonon - the combination reduces the thermal conductivity below the alloy limit.
Keywords :
III-V semiconductors; dislocations; electrical conductivity; erbium compounds; gallium arsenide; indium compounds; island structure; nanostructured materials; phonons; point defects; thermal conductivity; thermoelectricity; voids (solid); In0.53Ga0.47As-ErAs; alloy limit; atomic substitution; crystalline solids; dislocations; electrical conductivity; epitaxially embedded nanoislands; long wavelength phonon; nanostructures; point defects; scattering mechanism; short wavelength phonons; thermal conductivity; thermoelectric figure of merit; voids; Crystallization; Gallium alloys; Nanostructures; Phonons; Scattering; Semiconductor process modeling; Solids; Thermal conductivity; Thermal factors; Thermoelectricity;
Conference_Titel :
Thermoelectrics, 2005. ICT 2005. 24th International Conference on
Print_ISBN :
0-7803-9552-2
DOI :
10.1109/ICT.2005.1519874