Title :
The nanophotonic crystals of anodic alumina deposited on InGaN/GaN quantum well structures
Author :
Choi, Jae Ho ; Kim, Keunjoo ; Jung, Mi ; Woo, Deok Ha
Author_Institution :
Chonbuk Nat. Univ., Jeonju
Abstract :
Two-dimensional photonic crystals were fabricated by a two-step anodization of the deposited Al layer on p-GaN surface of InGaN/GaN multi-quantum-well light-emitting-diode structures. Alumina hole arrays with nanometer-scale dimensions enhance the photoluminescence intensity up to three times. The GaN photonic crystals formed by dry etching process also provide the enhancement of light extraction.
Keywords :
etching; photoluminescence; photonic crystals; semiconductor quantum wells; anodic alumina; dry etching process; light-emitting-diode structures; nanophotonic crystals; photoluminescence intensity; photonic crystals; quantum well structures; Dry etching; Gallium nitride; Grain boundaries; Light emitting diodes; Nanoporous materials; Optical surface waves; Photoluminescence; Photonic crystals; Plasma temperature; Scanning electron microscopy; Anodized Aluminum Oxide(AAO); InGaN/GaN multi-quantum well structure; Photoluminescence; Photonic Crystals;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388751
