Title :
Differential gain and linewidth enhancement factor in GaAs based quantum dot laser diodes
Author :
Kim, Kyoung Chan ; Han, Il Ki ; Yoo, Young Chae ; Lee, Jung Il ; Kim, Tae Geun
Author_Institution :
Korea Inst. of Sci. & Technol., Seoul
Abstract :
We investigated the differential gain and the linewidth enhancement factor (alpha-factor) from a 5-mum-wide stripe and 1-mm-long cavity uncoated InAs/GaAs quantum dot (QD) single mode laser diode (LD). As a result, we found that alpha-factor decreased with increasing the wavelength and was reached 0.057 at 1286 nm. These results indicate that our QD LD has an excellent beam quality under high-power operation.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; quantum dot lasers; InAs-GaAs - Interface; differential gain; high power operation; linewidth enhancement factor; quantum dot laser diodes; size 5 mum; Current measurement; Diode lasers; Fluctuations; Gallium arsenide; Performance gain; Quantum dot lasers; Refractive index; Temperature; Threshold current; Wavelength measurement; differential gain; laser diodes; linewidth enhancement facotr; quantum dot;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388755
