DocumentCode :
2213031
Title :
Spin hall effect in an inverted heterostructure
Author :
Koo, Hyun Cheol ; Huh, Seon-Gu ; Eom, Jonghwa ; Yi, Hyunjung ; Chang, Joonyeon ; Han, Suk-hee
Author_Institution :
Nano Device Res. Center Korea Inst. of Sci. & Technol., Seoul
Volume :
1
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
384
Lastpage :
385
Abstract :
Spin-up and -down electrons experience skew scattering in a two-dimensional electron gas layer and two kinds of spin electrons deviate different directions due to the spin dependent deflection. If spin is randomly oriented, the number of scattered electrons on both sides will be same and the Hall voltage will read zero. In this experiment, the carrier concentrations of spin-up and -down are unbalanced because the spin is aligned by stray field from the ferromagnet. Therefore, the voltage probe reads charge accumulation asymmetry. Spin Hall voltage is functions of the spin alignment direction and the amount of spin polarization.
Keywords :
Hall effect; electron spin polarisation; spin; 2D electron gas layer; Hall voltage; inverted heterostructure; skew scattering; spin Hall effect; spin alignment direction; spin polarization; spin-down electrons; spin-up electrons; Geometry; Hall effect; Indium compounds; Indium gallium arsenide; Magnetic field measurement; Magnetization; Optical scattering; Probes; Scanning electron microscopy; Voltage measurement; skew scattering; spin Hall effect; spin accumulation; spin dependent deflection; stray field;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
Type :
conf
DOI :
10.1109/NMDC.2006.4388778
Filename :
4388778
Link To Document :
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