DocumentCode :
2213092
Title :
Spin transfer enhancement and switching behavior in exchange bias spin valves
Author :
Nguyen, Hoang Yen Thi ; Yi, Hyunjung ; Joo, Sung-Jung ; Kim, Hi-Jung ; Shin, Kyung-Ho
Author_Institution :
Korea Inst. of Sci. & Technol., Seoul
Volume :
1
fYear :
2006
fDate :
22-25 Oct. 2006
Firstpage :
390
Lastpage :
391
Abstract :
Spin transfer from polarized conduction electrons to the free layer´s magnetic moment is considerably enhanced when the fixed layer of a spin valve is magnetically pinned by an exchange bias antiferromagnet. This enhancement leads to significantly lower threshold current densities for spin transfer magnetization switching and to much higher total current induced effective fields. The phase diagram is not symmetric as in non-exchange biased spin valves but asymmetric over the field axis.
Keywords :
antiferromagnetism; current density; magnetic moments; spin valves; exchange bias antiferromagnet; exchange bias spin valves; magnetic moment; polarized conduction electrons; spin transfer magnetization switching; switching behavior; threshold current densities; Antiferromagnetic materials; Magnetic anisotropy; Magnetic moments; Magnetic switching; Magnetization; Nanoscale devices; Spin valves; Switches; Threshold current; Torque; Current induced magnetization switching; Nano-scale magnetoresistive devices; Spin transfer magnetization switching; Spin transfer torque;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
Type :
conf
DOI :
10.1109/NMDC.2006.4388781
Filename :
4388781
Link To Document :
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