Title :
An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling
Author :
Di Cioccio, Léa ; Gueguen, Pierric ; Taibi, Rachid ; Signamarcheix, Thomas ; Bally, Laurent ; Vandroux, Laurent ; Zussy, Marc ; Verrun, Sophie ; Dechamp, Jérôme ; Leduc, Patrick ; Assous, Myriam ; Bouchu, David ; De Crecy, François ; Chapelon, Laurent-Luc
Author_Institution :
CEA/Leti- Minatec, Grenoble, France
Abstract :
An innovative die to wafer stacking is proposed for 3D devices. Known good dices are bonded on a processed wafer thanks to direct bonding. Oxide layers or patterned oxide/copper layers are used as the bonding medium. After a first thinning, a low stress high deposition rate oxide is deposited to embed the dices. A final thinning is then done to recover a flat and smooth surface before the trough silicon vias.
Keywords :
copper; microassembling; wafer bonding; wafer level packaging; wafer-scale integration; copper direct wafer bonding; die-to wafer 3D integration scheme; oxide/copper layers; planarised oxide inter-die filling; system on chip technologies; Copper; Filling; Optical microscopy; Planarization; Silicon; Stacking; Stress; Temperature; Through-silicon vias; Wafer bonding;
Conference_Titel :
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4511-0
Electronic_ISBN :
978-1-4244-4512-7
DOI :
10.1109/3DIC.2009.5306534
