Memory characteristics of MIS capacitors with parylene gate material

Author

Park, Byoungjun ; Im, Ki-Ju ; Cho, Kyoungah ; Kim, Sangsig

Author_Institution

Korea Univ., Seoul

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

422

Lastpage

423

Abstract

Memory characteristics of gold nanoparticles-embedded metal-insulator-semiconductor (MIS) capacitors with polymer (parylene) gate material are investigated in this study. Current density versus voltage (J-V) curves obtained from the MIS capacitors exhibit good performance for the parylene gate insulator compared with other gate insulating materials. Capacitance versus voltage (C-V) curves show a large flat band voltage shift, which indicates the possibility of charge storage in the gold nanoparticles. The clockwise hysteresis observed in the C-V curves implies that the trapped electrons in gold nanoparticles originate from the top electrode.

Keywords

MIS capacitors; gold; insulating materials; nanoparticles; Au; Au - Element; C-V curves; J-V curves; MIS capacitors; capacitance versus voltage curves; current density versus voltage curves; flat band voltage shift; gate insulating materials; gold nanoparticles; memory characteristics; metal-insulator-semiconductor capacitors; parylene gate insulator; polymer (parylene) gate material; Capacitance-voltage characteristics; Capacitors; Current density; Gold; Inorganic materials; Insulation; Metal-insulator structures; Nanoparticles; Polymers; Voltage; capacitance; gold; memory; nanoparticle; parylene;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388797

Filename

4388797