• DocumentCode
    2213521
  • Title

    Comparison of electrical characteristics of back- and top-gate Si nanowire field-effect transistors

  • Author

    Changjoon Yoon ; Kihyun Keem ; Jeongmin Kang ; Dong-Young Jeong ; Moon-Sook Lee ; In-Seok Yeo ; U-In Chung ; Joo-Tae Moon ; Sangsig Kim

  • Author_Institution
    Korea Univ., Seoul
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    424
  • Lastpage
    425
  • Abstract
    Top-gate(TG) field effect transistors (FETs) with channels composed of Si nanowires were successfully fabricated in this study using photolithographic processes. In the TG FETs fabricated on oxidized Si substrates, the channels composed of Si nanowires with diameters of about 100 nm with natural SiO2. The surfaces of the Si nanowires with natural SiO2 were covered with the gate metal to form TG FETs.
  • Keywords
    field effect transistors; nanowires; photolithography; electrical characteristics; nanowire field effect transistors; photolithographic processes; Boron; Dielectric materials; Electric variables; Electrodes; FETs; Fabrication; Gold; Nanoscale devices; Powders; Voltage; FET; Nanowire; Si; comparison; top-gate;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0541-1
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388798
  • Filename
    4388798
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2213521