DocumentCode
2213524
Title
Development of wafer thinning and dicing technology for thin wafer
Author
Miyazaki, Chuichi ; Shimamoto, Haruo ; Uematsu, Toshihide ; Abe, Yoshiyuki
Author_Institution
Assoc. of Super-Adv. Electron. Technol. (ASET), Renesas Technol. Corp., Kodaira, Japan
fYear
2009
fDate
28-30 Sept. 2009
Firstpage
1
Lastpage
4
Abstract
Various stress relief and dicing methods are evaluated for 10 to 30 mum wafer thickness. DP(Dry Polish) and CMG (Chemical Mechanical Grinding) are the best solution for productivity and quality in wafer thinning. Highest die strength is achieved for the blade dicing and DBG (Dicing Before Grinding) due to the decreased backside chipping in thin wafer. As for DBG, it is necessary to improve the resin adhesive strength of H-WSS (Hard Wafer Support System).
Keywords
grinding; polishing; wafer-scale integration; backside chipping; blade dicing; chemical mechanical grinding; dicing technology; die strength; dry polish; hard wafer support system; resin adhesive strength; stress relief; thin wafer; wafer thinning; Blades; Chemical products; Chemical technology; Glass; Plasma applications; Productivity; Resins; Stress; Thickness control; Wheels;
fLanguage
English
Publisher
ieee
Conference_Titel
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location
San Francisco, CA
Print_ISBN
978-1-4244-4511-0
Electronic_ISBN
978-1-4244-4512-7
Type
conf
DOI
10.1109/3DIC.2009.5306548
Filename
5306548
Link To Document