DocumentCode
2213615
Title
Mechanism of thermopower maximum of Bi-Sb semiconducting alloys
Author
Itoh, M. ; Kitagawa, H. ; Kodama, T. ; Noguchi, H. ; Sota, S. ; Hasezaki, K. ; Noda, Y.
Author_Institution
Dept. of Mater. Sci., Shimane Univ., Matsue, Japan
fYear
2005
fDate
19-23 June 2005
Firstpage
197
Lastpage
200
Abstract
Temperature dependence of the Seebeck coefficient of Bi-Sb alloy, which is known to be an efficient thermoelectric material, is investigated in terms of the multi-carrier Boltzmann transport theory. The chemical potential is calculated self-consistently with the measured Hall coefficient, by solving an integral equation. The calculated chemical potential shows a clear indication of the extrinsic-to-intrinsic transition, and determines the temperature dependence of all the transport properties. In particular, maximum thermopower is bound to occur in the vicinity of the transition temperature. It is confirmed that the electrons in the L-point conduction band act as dominant carriers, whereas the valence bands at the L, T and H points serve primarily as carrier reservoirs. The electrons are sufficiently degenerate that the conventional analysis is misleading, corresponding to the unphysical solution of the equation.
Keywords
Boltzmann equation; Hall effect; Seebeck effect; bismuth compounds; chemical potential; conduction bands; integral equations; semiconductor materials; thermoelectric power; valence bands; Bi-Sb semiconducting alloys; BiSb; H-point; Hall coefficient; L-point conduction band; Seebeck coefficient; T-point; carrier reservoir; chemical potential; degenerate electrons; extrinsic-intrinsic transition; integral equation; multicarrier Boltzmann transport theory; self-consistent calculation; thermoelectric material; thermopower; transition temperature; transport properties; valence band; Bismuth; Chemicals; Effective mass; Electrons; Hall effect; Integral equations; Physics; Semiconductivity; Temperature dependence; Thermoelectricity;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermoelectrics, 2005. ICT 2005. 24th International Conference on
ISSN
1094-2734
Print_ISBN
0-7803-9552-2
Type
conf
DOI
10.1109/ICT.2005.1519918
Filename
1519918
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