Title :
Wet-process deposition of TSV liner and metal films
Author :
Truzzi, Claudio ; Raynal, Frederic ; Mevellec, Vincent
Author_Institution :
Alchimer, Massy, France
Abstract :
This paper describes the wet electrografting deposition of insulator, diffusion barrier and copper seed layers inside high aspect ratio Through Silicon Vias (TSVs). Basic properties of each layer of this full wet stack have been characterized: electrical and thermo-mechanical properties of insulator and copper seed, barrier properties of diffusion barrier, contaminant levels, morphology, and adhesion.
Keywords :
diffusion barriers; semiconductor device metallisation; vapour deposition; TSV liner; contaminant level; diffusion barrier; insulator; metal film; through silicon vias; wet electrografting deposition; wet process deposition; wet stack; Adhesives; Chemical industry; Chemical vapor deposition; Copper; Insulation; Polymers; Scanning electron microscopy; Silicon; Surface morphology; Through-silicon vias;
Conference_Titel :
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4511-0
Electronic_ISBN :
978-1-4244-4512-7
DOI :
10.1109/3DIC.2009.5306553
