A quarter-micron SIMOX-CMOS LVTTL-compatible gate array with an over 2,000 V ESD-protection circuit

Author

Ohtomo, Yusuke ; Mizusawa, Takeshi ; Nishimura, Kazuyoshi ; Sawada, Hirotoshi ; Ino, Masayuki

Author_Institution

NTT LSI Labs., Kanagawa, Japan

fYear

1996

fDate

5-8 May 1996

Firstpage

57

Lastpage

60

Abstract

A quarter-micron SIMOX-CMOS gate array with an LVTTL interface is described. The SIMOX-CMOS gates have the same delay at 1.2 V of supply voltage as that of the gates in 0.5-μm bulk CMOS at 3.3 V and reduce power consumption 87%. The interface circuits in the array convert 3.3 V external signal from/to 2.0 V-1.2 V internal signal with little power penalty. An ESD protection circuit for the chip shows over 2,000 V of ESD hardness in the advanced SIMOX-CMOS having 50-nm thick silicon film

Keywords

CMOS logic circuits; SIMOX; electrostatic discharge; large scale integration; logic arrays; protection; 0.25 micron; 1.2 to 2 V; 2000 V; 3.3 V; CMOS gate array; ESD protection circuit; LVTTL interface; LVTTL-compatible gate array; Si; quarter-micron SIMOX-CMOS; Breakdown voltage; Circuits; DC generators; Delay; Energy consumption; Laboratories; Large scale integration; Low voltage; Protection; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996

Conference_Location

San Diego, CA

Print_ISBN

0-7803-3117-6

Type

conf

DOI

10.1109/CICC.1996.510511

Filename

510511