Title :
A quarter-micron SIMOX-CMOS LVTTL-compatible gate array with an over 2,000 V ESD-protection circuit
Author :
Ohtomo, Yusuke ; Mizusawa, Takeshi ; Nishimura, Kazuyoshi ; Sawada, Hirotoshi ; Ino, Masayuki
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
A quarter-micron SIMOX-CMOS gate array with an LVTTL interface is described. The SIMOX-CMOS gates have the same delay at 1.2 V of supply voltage as that of the gates in 0.5-μm bulk CMOS at 3.3 V and reduce power consumption 87%. The interface circuits in the array convert 3.3 V external signal from/to 2.0 V-1.2 V internal signal with little power penalty. An ESD protection circuit for the chip shows over 2,000 V of ESD hardness in the advanced SIMOX-CMOS having 50-nm thick silicon film
Keywords :
CMOS logic circuits; SIMOX; electrostatic discharge; large scale integration; logic arrays; protection; 0.25 micron; 1.2 to 2 V; 2000 V; 3.3 V; CMOS gate array; ESD protection circuit; LVTTL interface; LVTTL-compatible gate array; Si; quarter-micron SIMOX-CMOS; Breakdown voltage; Circuits; DC generators; Delay; Energy consumption; Laboratories; Large scale integration; Low voltage; Protection; Silicon;
Conference_Titel :
Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3117-6
DOI :
10.1109/CICC.1996.510511
