Title :
An 1 GHz Class E LDMOS Power Amplifier
Author :
Ådahl, Andreas ; Zirath, Herbert
Author_Institution :
Microwave Electronics Laboratory, Chalmers University of Technology, Sweden. Phone: +46-(0)-31-772 50 48, Fax: +46-(0)-31-16 45 13, E-mail: adahl@ep.chalmers.se
Abstract :
A class E power amplifier working at 1 GHz and with an LDMOS transistor as switching element has been developed. The circuit is implemented with lumped and distributed elements. An output power of 6.2 W at 69 % drain efficiency with a gain of 11 dB was obtained at 1 GHz. Both simulations and measurements of the amplifier are presented within this paper. This is to our knowledge the highest efficiency and output power reported for a class E amplifier at 1 GHz.
Keywords :
Capacitance; Capacitors; Circuit simulation; High power amplifiers; Microwave amplifiers; Microwave transistors; Power amplifiers; Power generation; Switches; Voltage;
Conference_Titel :
Microwave Conference, 2003 33rd European
Conference_Location :
Munich, Germany
Print_ISBN :
1-58053-834-7
DOI :
10.1109/EUMA.2003.340946
