Title :
Surface sterilization with high energy ions
Author :
Meixler, L. ; Schmidt, J.
Author_Institution :
Plasma Phys. Lab., Princeton, NJ, USA
Abstract :
Summary form only given. There is a need for sterilization approaches that will deal with bacterial spores on a short time scale and without chemical agents. High-energy (e.g. 50 keV) ions, extracted from a low-density plasma using an ion implantation approach, have the theoretical potential for sufficient spore damage to preclude germination. The high dose rate, resulting from a modest ion current density to the surface to be sterilized, is a product of the short stopping distance for the implanted ions. This approach features a low density plasma, formed under modest vacuum conditions, with a short (e.g. 10 micro second) surface bias pulse to develop a high energy ion current. Hydrogen ions provide the best penetration and hydrogen is therefore the working gas of choice. Tests are underway to demonstrate this approach as a sterilization option for plastic containers.
Keywords :
biological techniques; microorganisms; plasma materials processing; surface treatment; 50 keV; H; bacterial spores; dose rate; germination; high energy ion current; high energy ions; high-energy ions; hydrogen ions; implanted ions; ion current density; ion extraction; ion implantation; ion penetration; low density plasma formation; low-density plasma; plastic containers; spore damage; sterilization option; stopping distance; surface bias pulse; surface sterilization; vacuum conditions; working gas; Chemicals; Current density; Elementary particle vacuum; Fungi; Hydrogen; Ion implantation; Microorganisms; Plasma chemistry; Plasma density; Plasma immersion ion implantation;
Conference_Titel :
Plasma Science, 2002. ICOPS 2002. IEEE Conference Record - Abstracts. The 29th IEEE International Conference on
Conference_Location :
Banff, Alberta, Canada
Print_ISBN :
0-7803-7407-X
DOI :
10.1109/PLASMA.2002.1030636