Title :
Bandgap modulation of single crystalline CdS xSe1-x ternary alloy nanowires
Author :
Choi, Young-Jin ; Hwang, In-Sung ; Park, Jae-Hwan ; Park, Jae-Gwan
Author_Institution :
Korea Inst. of Sci. & Technol., Seoul
Abstract :
Nanowires of CdSxSe1-x (0<x<1) ternary alloy have been synthesized by a simple pulsed laser ablation process in a hot-wall type chamber on an Au-coated Si substrate. The complete solid solution of CdS and CdSe was confirmed in the entire compositional range and the energy bandgap could be controlled from 1.74 eV to 2.45 eV as a function of sulfur content. The CdSxSe1-x nanowires in this study exhibits better optical properties and perfect crystallinity compared to those of bulk or thin films.
Keywords :
II-VI semiconductors; cadmium compounds; nanotechnology; nanowires; optical materials; photonic band gap; pulsed laser deposition; sulphur compounds; CdSxSe1-x - Interface; CdSSe; bandgap modulation; crystallinity; hot-wall type chamber; optical properties; pulsed laser ablation deposition process; single crystalline ternary alloy nanowires; Crystallization; Lattices; Materials science and technology; Nanowires; Optical films; Optical pulses; Photonic band gap; Pulsed laser deposition; Solids; Substrates; alloy; nanostructure; photoluminescence;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388814
