Title :
Generation of Si-O-C bond without Si-CH3 bond in hybrid type SiOC Film
Author :
Sang Shin, Jung ; Oh, Teresa
Author_Institution :
Chungcheongbuk-do I &C Found. Semicond. Test Center, Chungbuk
Abstract :
The chemical shift of SiOC film was observed according to the flow rate ratio. SiOC film has the broad main band of 880~1190 cm-1 and the sharp Si-CH3 bond at 1252 cm-1, and the infrared spectra in the Si-O-C bond moved to low frequency according to the increasing of an oxygen flow rate. The chemical shift affected the carbon content in the SiOC film, and the decreasing of carbon atoms elongated the C-H bonding length, relatively. The main bond without the sharp Si-CH3 bond at 1252 cm-1 consisted of Si-C, C-O and Si-O bonds, and became the bonding structure of the Si-O-C bond.
Keywords :
bonds (chemical); chemical shift; infrared spectra; semiconductor thin films; silicon compounds; bonding structure; carbon atoms; carbon content; chemical bonds; chemical shift; hybrid type semiconductor thin films; infrared spectra; oxygen flow rate; Amorphous materials; Bonding; Dielectric constant; Dielectric materials; Displays; Electromagnetic wave absorption; Infrared spectra; Polymer films; Semiconductor films; Silicon compounds; CH bond elongation; Si-CH3 bond; Si-O-C bond; redshift;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388817
