DocumentCode
2214183
Title
Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz & 5 GHz WLAN Applications
Author
Park, Min ; Ahn, Hokyun ; Kang, Dong Min ; Ji, Honggu ; Mun, Jaekyoung ; Kim, Haecheon ; Cho, Kyoung Ik
Author_Institution
Microwave Device Team, Wireless Communication Devices Department, Basic Research Laboratory, Electronics and Telecommunications Research Institute, 161 Gajeong-dong, Yuseong-gu, Daejeon 305-350, Korea. Phone: +82-42-860-5795, Fax: +82-42-860-6183, E-mail:
fYear
2003
fDate
Oct. 2003
Firstpage
371
Lastpage
374
Abstract
A single supply, high linearity, high efficient power devices and amplifier MMIC is implemented utilizing high performance of quasi-enhanced power PHEMT technology. The PHEMT power device features Vth= ¿0.65 V, Vbdg=26 V, Imax=144 mA/mm at Vgs=0.2 V, Gm=340 mS/mm. When matched on-wafer compromise between power and efficiency, the OIP3 at peak IP3 is 40.5 dBm for 2 GHz and 37.0 dBm for 5.8 GHz, respectively. The power amplifier achieves at 5.8 GHz Pout=27 dBm with associated PAE=45% at 5 V under Vgs=0 V, GL=14.5 dB, OIP3=37.5 dBm.
Keywords
Current density; Gallium arsenide; High power amplifiers; Linearity; Microwave amplifiers; Microwave devices; PHEMTs; Voltage; Wireless LAN; Wireless communication;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340967
Filename
4143031
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