• DocumentCode
    2214248
  • Title

    Evaluation of MV power stack topologies

  • Author

    Shakweh, Y.

  • Author_Institution
    FKI Ind. Drives, Loughborough, UK
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    42583
  • Lastpage
    42588
  • Abstract
    All major variable speed drive equipment manufacturers have recently launched one or more MV, PWM, voltage source inverter (VSI) drives to the market. These inverter drives are based on different power stack topologies and HV power devices (namely the insulated gate bipolar transistor and the integrated gate commutated thyristor). This paper reviews various MV PWM VSI power stack topologies in the power range 2-7 MW. It also examines and compares practical inverter stack topologies used by drive manufacturers to achieve a high power IGBT-based converter design with 4.16 kV AC RMS output voltage
  • Keywords
    PWM invertors; 2 to 7 MW; 4.16 kV; HV power devices; IGBT; IGCT; MV PWM voltage source inverter; MV power stack topologies evaluation; VSI; insulated gate bipolar transistor; integrated gate commutated thyristor; variable speed drive;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    PWM Medium Voltage Drives (Ref. No. 2000/063), IEE Seminar
  • Conference_Location
    Birmingham
  • Type

    conf

  • DOI
    10.1049/ic:20000340
  • Filename
    855243