DocumentCode :
2214248
Title :
Evaluation of MV power stack topologies
Author :
Shakweh, Y.
Author_Institution :
FKI Ind. Drives, Loughborough, UK
fYear :
2000
fDate :
2000
Firstpage :
42583
Lastpage :
42588
Abstract :
All major variable speed drive equipment manufacturers have recently launched one or more MV, PWM, voltage source inverter (VSI) drives to the market. These inverter drives are based on different power stack topologies and HV power devices (namely the insulated gate bipolar transistor and the integrated gate commutated thyristor). This paper reviews various MV PWM VSI power stack topologies in the power range 2-7 MW. It also examines and compares practical inverter stack topologies used by drive manufacturers to achieve a high power IGBT-based converter design with 4.16 kV AC RMS output voltage
Keywords :
PWM invertors; 2 to 7 MW; 4.16 kV; HV power devices; IGBT; IGCT; MV PWM voltage source inverter; MV power stack topologies evaluation; VSI; insulated gate bipolar transistor; integrated gate commutated thyristor; variable speed drive;
fLanguage :
English
Publisher :
iet
Conference_Titel :
PWM Medium Voltage Drives (Ref. No. 2000/063), IEE Seminar
Conference_Location :
Birmingham
Type :
conf
DOI :
10.1049/ic:20000340
Filename :
855243
Link To Document :
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