DocumentCode
2214249
Title
Flip-Chip Integration of Power HEMTs: A Step Towards a GaN MMIC Technology
Author
Seemann, Kay ; Ramberger, Suitbert ; Tessmann, Axel ; Quay, Rüdiger ; Schneider, Joachim ; RieBle, Markus ; Walcher, Herbert ; Kuri, Michael ; Kiefer, Rudolf ; Schlechtweg, Michael
Author_Institution
Fraunhofer IAF, University of Erlangen, Department of Electrical Engineering, Cauerstrasse 9, 91058 Erlangen, Germany, Phone: +49-9131-85-27610, Fax: +49-9131-302951, E-mail: seemann@lfte.de
fYear
2003
fDate
Oct. 2003
Firstpage
383
Lastpage
386
Abstract
In this paper, flip-chip integration is demonstrated as a method for faster progress towards a GaN MMIC technology by separating the development of active devices and passive matching circuits. This approach offers distinct advantages in the verification of passive components realized on a 2" SiC substrate. A proven 0.3¿m GaAs PHEMT technology was used for the transistors that allowed to reproducibly verify both, the flip-chip transitions and the behaviour of the coplanar SiC structures. As an example, three X-band amplifiers in flip-chip technology are presented that demonstrate the feasibility of the technology.
Keywords
Gallium arsenide; Gallium nitride; Gold; HEMTs; Integrated circuit technology; MIM capacitors; MMICs; MODFETs; Silicon carbide; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.340970
Filename
4143034
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