• DocumentCode
    2214379
  • Title

    Influence of 3D integration on 2D interconnections and 2D self inductors HF properties

  • Author

    Roullard, J. ; Capraro, S. ; Lacrevaz, T. ; Cadix, L. ; Eid, E. ; Farcy, A. ; Flechet, B.

  • Author_Institution
    IMEP-LAHC, Univ. Savoie, Le Bourget du Lac, France
  • fYear
    2009
  • fDate
    28-30 Sept. 2009
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this study, effects due to 3D level stack on HF properties of 2D interconnections and 2D self inductors integrated in the back end of line (BEOL) are investigated. Self-inductors are considered as self coupled interconnects around a long loop where the magnetic field is confined. So, simple and coupled 2D interconnections of BEOL are studied in order to determine the influence of the silicon substrate stack on propagation delay, crosstalk and factor quality of 2D interconnects and self-inductors.
  • Keywords
    Q-factor; inductors; integrated circuit interconnections; 2D interconnection; 2D self inductors HF properties; 3D integration; 3D level stack; Si; back end of line; crosstalk; magnetic field; propagation delay; silicon substrate stack; Conductors; Copper; Delay effects; Hafnium; Inductors; Insulation; Integrated circuit interconnections; Metallization; Silicon; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    978-1-4244-4511-0
  • Electronic_ISBN
    978-1-4244-4512-7
  • Type

    conf

  • DOI
    10.1109/3DIC.2009.5306580
  • Filename
    5306580