Title :
Electronic transport in indium oxide nanowire field effect transistors
Author :
Jo, Gunho ; Maeng, Jongsun ; Hong, Woong-Ki ; Kim, Tae-Wook ; Lee, Takhee
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
Abstract :
High-quality single-crystal indium oxide (ln2O3) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized ln2O3 NWs are non-stoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The ln2O3 NW field effect transistors show the n-type behavior due to these oxygen vacancies.
Keywords :
X-ray spectroscopy; field effect transistors; indium compounds; nanowires; In2O3; In2O3 - Binary; X-ray photoelectron spectroscopic; electronic transport; gold catalytic vapor-liquid-solid growth; high-quality single-crystal indium oxide; indium oxide nanowire field effect transistors; n-type behavior; Electrodes; FETs; Gold; Indium; Materials science and technology; Scanning electron microscopy; Spectroscopy; Substrates; Transmission electron microscopy; X-ray scattering; indium oxide; nanotechnology; nanowires; transistor;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388833
