• DocumentCode
    2214436
  • Title

    Electronic transport in indium oxide nanowire field effect transistors

  • Author

    Jo, Gunho ; Maeng, Jongsun ; Hong, Woong-Ki ; Kim, Tae-Wook ; Lee, Takhee

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
  • Volume
    1
  • fYear
    2006
  • fDate
    22-25 Oct. 2006
  • Firstpage
    494
  • Lastpage
    495
  • Abstract
    High-quality single-crystal indium oxide (ln2O3) nanowires (NWs) are synthesized using gold catalytic vapor-liquid-solid growth. The synthesized ln2O3 NWs are non-stoichiometric due to oxygen vacancies from X-ray photoelectron spectroscopic study. The ln2O3 NW field effect transistors show the n-type behavior due to these oxygen vacancies.
  • Keywords
    X-ray spectroscopy; field effect transistors; indium compounds; nanowires; In2O3; In2O3 - Binary; X-ray photoelectron spectroscopic; electronic transport; gold catalytic vapor-liquid-solid growth; high-quality single-crystal indium oxide; indium oxide nanowire field effect transistors; n-type behavior; Electrodes; FETs; Gold; Indium; Materials science and technology; Scanning electron microscopy; Spectroscopy; Substrates; Transmission electron microscopy; X-ray scattering; indium oxide; nanotechnology; nanowires; transistor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
  • Conference_Location
    Gyeongju
  • Print_ISBN
    978-1-4244-0540-4
  • Electronic_ISBN
    978-1-4244-0541-1
  • Type

    conf

  • DOI
    10.1109/NMDC.2006.4388833
  • Filename
    4388833
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2214436