Title :
A parallel ADC for high-speed CMOS image processing system with 3D structure
Author :
Kiyoyama, K. ; Ohara, Y. ; Lee, K.-W. ; Yang, Y. ; Fukushima, T. ; Tanaka, T. ; Koyanagi, M.
Author_Institution :
Micro/Nano-Machining Res. & Educ. Center, Tohoku Univ., Sendai, Japan
Abstract :
In this paper, we describe the fundamental study of a parallel signal processing circuit, which includes a pixel circuit and a parallel analog-to-digital converter (ADC) with hierarchical correlated double sampling (CDS). To realize high speed image capturing sensor, we have proposed a block-parallel signal processing with three-dimensional (3D) structure. Using 3D structure, the different function layers are stacked vertically and interconnected electrically by through-Si vias (TSVs), which can improve sensor performance and signal band width. On the other hand, the fixed pattern noise (FPN), caused by the circuit device variation, becomes a critical challenge. Experiments on the fabricated pixel circuit have been implemented in a single-layer (two-dimensional) 0.18-mum CMOS image sensor technology. With the analog CDS, the FPN of pixel circuit is reduced by 8.6%. To eliminate the FPN of parallel ADC, a digital CDS technique is implemented. The proposed ADC with digital CDS is designed in a two-dimensional 0.18-mum CMOS technology. The ADC design, including an 8-bit memory, a 6-bit memory, a subtraction circuit, and a comparator, occupies 100times100 mum2 area and 0.9 mW with supply voltage 1.8 V and 1 MS/s conversion rate. The functional simulation and measurement results confirm that our techniques can effectively reduce fixed pattern noise.
Keywords :
CMOS image sensors; analogue-digital conversion; image processing equipment; 3D structure; 6-bit memory; 8-bit memory; TSV; analog CDS; block-parallel signal processing; circuit device variation; comparator; correlated double sampling; digital CDS; fixed pattern noise; high speed image capturing sensor; high-speed CMOS image processing system; parallel ADC; parallel analog-to-digital converter; parallel signal processing circuit; pixel circuit; power 0.9 mW; single-layer CMOS image sensor technology; size 0.18 mum; subtraction circuit; through-Si vias; voltage 1.8 V; Analog-digital conversion; CMOS image sensors; CMOS process; CMOS technology; Circuit noise; Image processing; Image sampling; Image sensors; Signal processing; Signal sampling;
Conference_Titel :
3D System Integration, 2009. 3DIC 2009. IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4511-0
Electronic_ISBN :
978-1-4244-4512-7
DOI :
10.1109/3DIC.2009.5306583