Fabrication of Si1-xGex alloy nanowire FETs

Author

Jeon, Eun-Kyoung ; Sung, Han-Kyu ; Lee, Jeong-O ; Choi, Heon-Jin ; Kim, Ju-Jin

Author_Institution

Adv. Mater. Div., Res. Inst. of Chem. Technol., Daejon

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

502

Lastpage

503

Abstract

We have fabricated field effect transistors (FETs) by using high quality Si_1-xGe_x alloy nanowires. To obtain stable contacts between Si_1-xGe_x alloy nanowire and Ni/Au electrodes, we annealed the samples at 300 degC furnace with Ar atmosphere or RTA at 400 X2. |4| Three different Si_1-xGe_x alloy nanowires (x=5, 15, 30) were used for the fabrication of field effect transistors, and p-type gating effect observed from Si_1-xGe_x alloy nanowire devices. Among them, pronounced p-type transistor behavior, with on/off ratios as high as 106 observed from Si_0.7Ge_0.3 nanowire field effect transistor.

Keywords

Ge-Si alloys; contact resistance; field effect transistors; gold; nanoelectronics; nanowires; nickel; rapid thermal annealing; Ni-Au; Ni-Au - Binary; RTA; Si_1-xGe_x - System; SiGe; argon atmosphere; contacts stability; electrodes; field effect transistors; on-off ratio; p-type gating effect; p-type transistor behavior; rapid thermal annealing technique; silicon-germanium alloy nanowire FET fabrication; temperature 300 C; temperature 400 C; Annealing; Electrodes; FETs; Fabrication; Furnaces; Germanium alloys; Gold alloys; Nanowires; Nickel alloys; Silicon alloys; Field effect transistor; SiGe alloy nanowires;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388837

Filename

4388837