Title : 
Materials characterization using a structure based on microstrip line
         
        
            Author : 
Zarral, Lamia ; Ndagijimana, J.
         
        
            Author_Institution : 
Dept. of Electron., FERHAT Abbess Univ., Setif, Algeria
         
        
        
        
        
        
            Abstract : 
The considerable evolution of microelectronics has highlighted the need for new dielectric materials of high permittivity (high-k). Because of their high permittivity, these materials can also be very good candidates for other microwave applications, especially if their dielectric losses are low. A new application of miniature antennas performed on these high-k materials and designed a new concept of interconnections without son. Proper use of these materials requires a knowledge of their dielectric properties. To do so, a rigorous characterization of these materials has been established, and we used to characterize our materials. We present in this section a technique for extracting the permittivity and permeability of high-k materials from measurements of planar transmission lines.
         
        
            Keywords : 
dielectric losses; high-k dielectric thin films; microstrip lines; permeability; permittivity; dielectric losses; dielectric materials; dielectric properties; high permittivity; high-k materials; material characterization; microelectronics; microstrip line; permeability; planar transmission line measurement; Dielectric measurements; Dielectrics; High K dielectric materials; Microelectronics; Permittivity; Transmission line measurements; Electric characterization; coaxial probe; complex permittivity; multilayer materials; semiconductor materials; thin layer dielectric; transmission-line;
         
        
        
        
            Conference_Titel : 
Mediterranean Microwave Symposium (MMS), 2011 11th
         
        
            Conference_Location : 
Hammamet
         
        
        
            Print_ISBN : 
978-1-4577-1814-4
         
        
            Electronic_ISBN : 
2157-9822
         
        
        
            DOI : 
10.1109/MMS.2011.6068580