Four states memory function in GaMnAs ferromagenic semiconductor epilayer

Author

Lee, Sanghoon ; Shin, D.Y. ; Liu, X. ; Furdyna, J.K.

Author_Institution

Korea Univ., Seoul

Volume

1

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

234

Lastpage

235

Abstract

GaMnAs ferromagnetic semiconductor has strong biaxial in-plane anisotropy, which generates four stable magnetization easy axes at zero magnetic field. This feature results in double switching behavior in the main loop of planar Hall resistance (PHR) spectrum. The minor loops of PHV spectrum exhibited four stable states corresponding to four magnetic easy axes at zero magnetic field. This feature clearly demonstrates the possibility of quaternary memory device application using GaMnAs ferromagnetic semiconductor.

Keywords

ferromagnetic materials; gallium compounds; magnetic anisotropy; magnetic epitaxial layers; magnetic semiconductors; semiconductor epitaxial layers; GaMnAs; GaMnAs - System; GaMnAs ferromagnetic semiconductor epilayer; PHV spectrum; biaxial in-plane anisotropy; four states memory function; magnetization easy axes; planar Hall resistance spectrum; quaternary memory device; Hydrogen; Magnetic anisotropy; Magnetic field measurement; Magnetic fields; Magnetic semiconductors; Magnetic separation; Molecular beam epitaxial growth; Perpendicular magnetic anisotropy; Saturation magnetization; Semiconductor films; GaMnAs; anisotropy; ferromagnetic semiconductor; quaternary states;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0541-1

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388851

Filename

4388851