DocumentCode :
2214852
Title :
Forming damped LRC parasitic circuits in simultaneously switched CMOS output buffers
Author :
Gabara, T. ; Fischer, Wolf-Joachim ; Harrington, J. ; Troutman, W.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ
fYear :
1996
fDate :
5-8 May 1996
Firstpage :
277
Lastpage :
280
Abstract :
Measurements of a 0.5 μm CMOS testchip using several techniques have demonstrated a reduction in the generation of ground bounce. These techniques are: an automatic transistor sizing method that compensates for process, temperature, and supply voltage variations; a self-adjusting internal capacitive load that counteracts the increased switching rate of faster parts; and an integrated resistive element inserted directly into the power and ground leads that dampens the RLC oscillations. Comparison measurements between a conventional buffer and the new buffer have demonstrated that the amplitude and duration of the generated ground bounce has been reduced 2.5× and 2×, respectively. A single external resistor is required to set a reference current
Keywords :
CMOS logic circuits; buffer circuits; capacitance; circuit oscillations; compensation; equivalent circuits; integrated circuit modelling; 0.5 micron; CMOS testchip; RLC oscillation damping; automatic transistor sizing method; damped LRC parasitic circuits; ground bounce; integrated resistive element; parasitic circuit formation; self-adjusting internal capacitive load; simultaneously switched CMOS output buffers; Circuit testing; Coupling circuits; Fluctuations; Inductance; Land surface temperature; Packaging; Parasitic capacitance; RLC circuits; Switching circuits; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3117-6
Type :
conf
DOI :
10.1109/CICC.1996.510558
Filename :
510558
Link To Document :
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