Title :
Simulation of current-injection and all-optical nanophotonic semiconductor devices with multi-level multi-electron FDTD model
Author :
Huang, Yingyan ; Ho, Seng-Tiong
Author_Institution :
Northwestern Univ., Evanston
Abstract :
Simulating the spatial-temporal behaviors of novel nanophotonic semiconductor devices is challenging, as it has to deal with complex electromagnetic structures and semiconductor carrier dynamics. We report successful simulation of current-injection photonic-crystal laser and all-optical photonic transistor using our multi-level multi-electron FDTD model.
Keywords :
finite difference time-domain analysis; nanoelectronics; optical materials; photonic crystals; phototransistors; semiconductor lasers; semiconductor process modelling; spatiotemporal phenomena; all-optical nanophotonic semiconductor device; current-injection photonic-crystal laser; current-injection simulation; multilevel multielectron FDTD model; spatial-temporal behavior; Computational modeling; Finite difference methods; Laser modes; Nanoscale devices; Photonic crystals; Pump lasers; Semiconductor devices; Semiconductor lasers; Semiconductor materials; Time domain analysis; FDTD; all-optical switch; phtonic crystal laser;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388859
