Title :
III-V semiconductor nanoelectronics for post si era
Author :
Hasegawa, Hideki
Author_Institution :
Hokkaido Univ., Sappro
Abstract :
Scaling limit of Si CMOS technology and advent of "Ubiquitous Network Era" seem to open up new horizon for III-V nanoelectronics with much wider application areas than today. Here, its future challenges and key issues are discussed.
Keywords :
CMOS integrated circuits; III-V semiconductors; nanoelectronics; silicon; CMOS technology; III-V semiconductor nanoelectronics; Si; Si - Element; post Si era; ubiquitous network era; Biosensors; CMOS technology; Chemical and biological sensors; Energy consumption; III-V semiconductor materials; Intelligent sensors; Nanoelectronics; Nanotechnology; Nanowires; Quantum computing; III-V compound semiconductors; gate dielectrics; nanoelectronics; nanostructure; surface passivation;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388862
