DocumentCode
2215111
Title
CMOS state of the arts and future potential
Author
Nishi, Yoshio
Author_Institution
Stanford Univ., Stanford
Volume
1
fYear
2006
fDate
22-25 Oct. 2006
Firstpage
272
Lastpage
273
Abstract
The progress made up to now for CMOS scaling in drive current improvement and suppression of off current of MOSFET, with introductions of new structures, new materials for channel, gate insulator and gate electrode is reviewed. Also discussed will be future potential of a variety of revolutionary nanoelectronic devices such as nanowires/nanotubes and new materials based non-volatile memories from integrated electronics point of view.
Keywords
CMOS integrated circuits; nanoelectronics; random-access storage; CMOS scaling; MOSFET; drive current improvement; gate electrode; gate insulator; nonvolatile memories; off current suppression; revolutionary nanoelectronic devices; Conducting materials; Electron mobility; III-V semiconductor materials; MOSFET circuits; Nanotubes; Nanowires; Nonvolatile memory; Potential well; Silicon; Tensile strain; CMOS scaling; High mobility channel; Metal gate work function; Nanotube; Nanowire; Nonvolatile memory;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location
Gyeongju
Print_ISBN
978-1-4244-0541-1
Electronic_ISBN
978-1-4244-0541-1
Type
conf
DOI
10.1109/NMDC.2006.4388864
Filename
4388864
Link To Document