Title :
An EEPROM compact circuit model
Author :
Klein, P. ; Hoffmann, K. ; Kowarik, O.
Author_Institution :
Inst. of Electron., Univ. of Bundeswehr Munich, Neubiberg, Germany
Abstract :
The model allows the simulation of threshold voltage and drain current shifts as well as FN-tunnel and substrate currents caused by FN and band-to-band tunneling. This is achieved by determining the floating gate charge and voltage as function of time and short channel and geometry effects during programming, erasing and reading
Keywords :
EPROM; PLD programming; integrated circuit modelling; tunnelling; EEPROM; FN-tunnel currents; band-to-band tunneling; compact circuit model; drain current shifts; erasing; floating gate charge; geometry effects; programming; reading; short channel effects; substrate currents; threshold voltage; Capacitance; Circuit simulation; Current density; EPROM; Equations; Functional programming; Geometry; Semiconductor process modeling; Threshold voltage; Tunneling;
Conference_Titel :
Custom Integrated Circuits Conference, 1996., Proceedings of the IEEE 1996
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-3117-6
DOI :
10.1109/CICC.1996.510568
