Title :
Substrates influence on the structure and static electromagnetic properties of FeCoB-SiO2 thin films
Author :
Zhang, L. ; Zhu, Z.W. ; Deng, L.J.
Author_Institution :
Eng. Res. Center of Electromagn. Wave Absorbing Mater., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
The microstructure and electromagnetic properties of FeCoB-SiO2 thin films which were deposited on different substrates (silicon, glass and Mylar) by using magnetron sputtering were studied. X-Ray Diffraction revealed that FeCo nanocrystalline only precipitated in FeCoB-SiO2 thin films on silicon and glass substrates, and the FeCoB-SiO2 films on Mylar substrate were amorphous. The surface images obtained by atomic microscopy (AFM) indicated that films on Mylar substrate with biggest particle size (about 120-150 nm), and agglomerated particle was discovered. The static electromagnetic properties, including resistivity and saturation magnetization for the films on different substrates, had also been investigated. The films sputtered on glass showed highest resistivity (2140 muOmega.cm) and a biggest saturation magnetization (4 pi Ms = 13 kG).
Keywords :
X-ray diffraction; atomic force microscopy; boron alloys; cobalt alloys; electrical resistivity; elemental semiconductors; ferromagnetic materials; glass; iron alloys; magnetic thin films; magnetisation; nanostructured materials; particle size; silicon; silicon compounds; sputter deposition; AFM; FeCoB-SiO2; Mylar substrate; Si; X-Ray Diffraction; atomic force microscopy; electromagnetic properties; glass substrates; magnetization; magnetron sputtering; microstructure; nanocrystalline materials; particle size; resistivity; resistivity 2140 muohmcm; thin films; Amorphous magnetic materials; Conductivity; Glass; Magnetic properties; Microstructure; Saturation magnetization; Semiconductor thin films; Silicon; Sputtering; X-ray imaging; Mylar substrate; amorphous; resistivity; static electromagnetic properties;
Conference_Titel :
Applied Superconductivity and Electromagnetic Devices, 2009. ASEMD 2009. International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-3686-6
Electronic_ISBN :
978-1-4244-3687-3
DOI :
10.1109/ASEMD.2009.5306621
