DocumentCode
2215413
Title
A multi-regional small-signal model derived from the charge-based large-signal bipolar transistor model
Author
Jo, M.S. ; Burk, D.E.
Author_Institution
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
fYear
1988
fDate
12-13 Sep 1988
Firstpage
111
Lastpage
113
Abstract
A multiregional small-signal model is derived from a charge-based large-signal bipolar transistor model, which has been upgraded to include emitter crowding, sidewall injection, and other multidimensional effects. This multiregional model is verified and the effect of this three-region analysis of the parameter extraction for the small-signal transistor model over a range of (low to high) injection conditions is demonstrated
Keywords
bipolar transistors; semiconductor device models; bipolar transistor; charge based large signal model; emitter crowding; multi-regional small-signal model; multidimensional effects; sidewall injection; three-region analysis; Bipolar transistors; Boundary conditions; Circuit simulation; Diodes; Numerical models; Parameter extraction; Predictive models; SPICE; Scattering parameters; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1988.51058
Filename
51058
Link To Document