Title :
Characterization of near-interface oxide trap density in remote plasma nitrided oxides for nano-scale MOSFETs
Author :
Son, Younghwan ; Baek, Chang-Ki ; Bomsoo Kim ; Han, In-Shik ; Goo, Tae-Gyu ; You, Ooksang ; Choi, Wonho ; Ji, Hee-Hwan ; Lee, Hi-Deok ; Kim, Dae M.
Author_Institution :
Dept. of Electr. Eng., Chungnam Nat. Univ., Daejeon
Abstract :
Presented in this paper is the extracted depth profile of oxide trap density in ultra thin remote plasma nitrided oxides (RPNO) using multi-frequency and temperature charge pumping (CP) technique. The optimum nitrogen concentration in RPNO is discussed versus the gate oxide thickness for nano-scale CMOSFET.
Keywords :
MOSFET; nanoelectronics; nitrogen; nitrogen compounds; RPNO; charge pumping technique; nano-scale MOSFET; near-interface oxide trap density; nitrogen concentration; remote plasma nitrided oxides; CMOSFETs; Charge pumps; Electron traps; Frequency measurement; MOSFETs; Nitrogen; Plasma density; Plasma measurements; Plasma temperature; Tunneling; charge pumping; oxide trap; remote plasma nitride oxide;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0540-4
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388878
