Interfacial layer thickness dependence of the low- frequency noise in high-k dielectric MOSFETs

Author

Nam, Hyungdo ; Lee, Jungil ; Han, Ilki ; Yang, Haesuk

Author_Institution

Nano Device Res. Center, Korea Inst. of Sci. & Technol., Seoul

Volume

fYear

2006

fDate

22-25 Oct. 2006

Firstpage

516

Lastpage

517

Abstract

We present the results of simulation study on the low-frequency excess noise in high-k HfO₂/SiO₂ dual dielectric n-MOSFET´s. Based on the ´unified model´ where the tunneling to the traps in the oxides is the major noise generation mechanism, we show how the low frequency noise density depends on the thickness of the interfacial oxide layer.

Keywords

MOSFET; hafnium compounds; high-k dielectric thin films; semiconductor device models; silicon compounds; HfO₂-SiO₂; HfO₂-SiO₂ - Interface; high k dielectric MOSFET; interfacial layer thickness dependence; low frequency excess noise; low frequency noise density; noise generation; Dielectric devices; Electron traps; Fluctuations; Frequency; Hafnium oxide; High-K gate dielectrics; Low-frequency noise; MOSFETs; Semiconductor device noise; Tunneling; MOSFETs; high-k dielectric; low-frequency noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE

Conference_Location

Gyeongju

Print_ISBN

978-1-4244-0540-4

Electronic_ISBN

978-1-4244-0541-1

Type

conf

DOI

10.1109/NMDC.2006.4388881

Filename

4388881

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2215530