Title :
Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots
Author :
Lee, S.-W. ; Kim, T.G. ; Hirakawa, K. ; Kim, J.S. ; Cho, H.Y.
Author_Institution :
Dongguk Univ., Seoul
Abstract :
We have investigated a lateral conduction mid-infrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120-400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.
Keywords :
Ge-Si alloys; infrared detectors; photoconductivity; photodetectors; self-assembly; Ge-Si; Ge-Si - Interface; electron volt energy 120 meV to 400 meV; holes photoionization; intersubband transition; lateral conduction mid-infrared photodetectors; self-assembled quantum dots; Germanium silicon alloys; Infrared detectors; Infrared spectra; Optical films; Optical filters; Optical pumping; Photoconductivity; Photodetectors; Quantum dots; Silicon germanium; Ge quantum dot; Infrared photodetector; photocurrent;
Conference_Titel :
Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE
Conference_Location :
Gyeongju
Print_ISBN :
978-1-4244-0541-1
Electronic_ISBN :
978-1-4244-0541-1
DOI :
10.1109/NMDC.2006.4388883
