DocumentCode
2215732
Title
Influence of RF signal power on tunable MEMS capacitors
Author
Cruau, Aurelie ; Nicole, Pierre ; Lissorgues, Gaële ; Tassetti, Charles-Marie
Author_Institution
Thales Airborne Systems, OHTA department, Centre Charles Nungesser, 78851, Elancourt cedex, France, + 33(0) 134813512, Email: cruaua@esiee.fr
fYear
2003
fDate
Oct. 2003
Firstpage
663
Lastpage
666
Abstract
Capacitive structures are sensitive to the electrostatic force created by the RF signal going through them. In the case of MEMS tunable capacitors, the consequences on performances and capacitance values are to be quantified. Two systems are studied: one-gap with RF signal and actuation voltage on same electrodes, and two-gaps with RF signal separated from actuation. Computational results show great influence of power on pull-in, even for low power levels, for both MEMS capacitor structures.
Keywords
Capacitance; Capacitors; Electrodes; Electrostatics; Geometry; Micromechanical devices; Radio frequency; Switches; Tunable circuits and devices; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2003 33rd European
Conference_Location
Munich, Germany
Print_ISBN
1-58053-834-7
Type
conf
DOI
10.1109/EUMA.2003.341040
Filename
4143104
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