Title :
Broadband, 0.25 μm CMOS LNAs with sub-2dB NF for GSM applications
Author :
Qiuting Huang ; Orsatti, Paolo ; Piazza, Francesco
Author_Institution :
Integrated Syst. Lab., Fed. Inst. of Technol., Zurich
Abstract :
Noise figures below 2 dB are generally hard to achieve by integrated LNAs with few external components, whether the technology is GaAs or bipolar. This paper reports the design of CMOS LNAs with NF as low as 1.74, while providing 50 Ω impedance at both input and output, good linearity for both small (IP3) and large signals (CP) and insensitivity to component tolerances. The best LNA consumes only 10.8 mA and requires only one external inductor
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF integrated circuits; cellular radio; integrated circuit noise; wideband amplifiers; 0.25 micron; 1.74 dB; 10.8 mA; CMOS LNAs; GSM applications; component tolerances; external inductor; linearity; noise figures; Application specific integrated circuits; Attenuation; Costs; GSM; Impedance; Matched filters; Noise figure; Noise measurement; Passband; Radio frequency;
Conference_Titel :
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-4292-5
DOI :
10.1109/CICC.1998.694908
